Electrical Characterization of GaN

摘要：

　　GaN based blue light emitting diodes were characterized, using deep level transient spectroscopy technique. Nine defects having ionization energies: 0.06, 0.08, 0.09, 0.14, 0.10 , 0.14, 0.14, 0.16 and 0.65 eV and corresponding capture cross-sections (σ∞)4.0 × 10-14, 1.3 × 10-13, 7.6×10-14, 6.95×10-13, 3.53×10-14, 1.6×10-13, 8.0×10-14, 7.34×10-14 and 1.8×10-5 cm2 were identified. Respective concentrations were found to be 8.81×1013, 8.56×1013, 8.90×1013, 8.68 × 1013, 8.62 × 1013, 8.56 × 1013, 8.66 × 1013, 8.57 × 1013, 8.54 × 1013, 8.68 × 1014, and 8.46 × 1014 cm-3.

作者: Nazir A.Naz M.Suleman Akbar Ali

作者单位: Federal Urdu University of Arts, Science and Technology Islamabad, Pakistan Department of Basic Sciences, Riphah International University, Islamabad, Pakistan Federal Urdu University of Arts, Science and Technology Islamabad, Pakistan;Department of Basic Scie

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)

会议地点: 广州

会议语种:英文

页码: 1975-1978

在线出版日期: 2014-08-01（万方平台首次上网日期，不代表论文的发表时间）