Study of p-type Porous Silicon

摘要：

　　Porous silicon fabricated by electrochemical etching was studied using Scanning Electron Microscope and Elemental Differential X ray Analyzer. The etched samples were found to emit red luminescence when exposed to ultraviolet light of wavelength 254 nm. Micrographs of the samples obtained by Scanning Electron Microscope showed a porous layer at the surface. Elemental Differential X ray Analysis provided the evidence of oxidation of a porous layer. Red luminescence emitted from the surface may be attributed to confinement of holes in the oxidized layer.

作者: Nazir A.Naz M.Jamil Akbar Ali

作者单位: Federal Urdu University of Arts, Science and Technology, Islamabad G-7/1, Pakistan

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)

会议地点: 广州

会议语种:英文

页码: 1979-1982

在线出版日期: 2014-08-01（万方平台首次上网日期，不代表论文的发表时间）