Through-Silicon-Via Pairs Modelling via Compressed Sensing

摘要：

　　Through-Silicon-Vias(TSVs)are the critical enabling technique for three-dimensional integrated circuits(3D ICs).While there are a few existing works in literature to model the electrical performance of TSVs,they are either for fixed geometry or in lack of accuracy.In this paper,we use compressed sensing technique to model the electrical performance of TSV pairs.Experimental results indicate that with an exceptionally small number of samples,our model has a maximum relative error of 3.70%compared with full-wave simulations over a wide range of geometry parameters and frequencies.

作者: Tao Wang Jun Fan Yiyu Shi Boping Wu

作者单位: Missouri University of Science and Technology,USA

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2014(2014年电磁学研究新进展学术研讨会)

会议地点: 广州

会议语种:英文

页码: 2496-2501

在线出版日期: 2014-08-01（万方平台首次上网日期，不代表论文的发表时间）