Influence of hole diameter on the average size and quantity distribution of Si nanoparticles

摘要：

　　The single crystalline Si target with high resistivity was ablated by a XeCl excimer laser(wavelength 308nm)in pure Ar gas under the ambient pressure of 10 Pa.The mask with a 1-10 mm diameter hole in the center was placed at a distance of 1.5 cm to the Si target.The Si nanocrystalline films were systemically deposited on a glass or single crystalline Si substrate placed behind the mask parallelly with a distance of 1.0 cm.The Raman and X-ray diffraction spectra indicate that the films were nanocrystalline.Scanning electron microscope images of the films showed that the diameter of the hole affected on the quantity and distributed range of Si nanoparticles on the substrate.It was obtained that the average size of Si nanoparticles decreasing with the diameter of the hole increasing,the quantity of Si nanoparticles was proportional to the power of 1.5 of the hole diameter.It is the nonlinear dynamic process to lead to the experimental result.

关键词： pulsed laser ablation Si nanoparticles mask hole diameter nanoparticles size

作者: Chu Lizhi Zong Yu Deng Zechao Ding Xuecheng Zhao Hongdong Wang Yinglong

作者单位: College of Physics Science and Technology,Hebei University,Baoding,China 071002 College of Information Engineering,Hebei University of Technology,Tianjin,China 300401

会议类型: 国际会议

会议名称: 2013 International Conference on Optical Instrument and Technology (OIT’2013)(2013年光学仪器与技术国际会议)

会议地点: 北京

会议语种:英文

页码: 1-5

在线出版日期: 2013-11-17（万方平台首次上网日期，不代表论文的发表时间）