Improving the Luminescence Properties of Multi-stacked InAs/GaAs Quantum Dots by GaAsP Strain-reducing Layer

摘要：

　　The growth of InAs/GaAs quantum dots was investigated with GaAsP as a strainreducing layer.Room-temperature photoluminescence demonstrated the improvement in luminescence properties for multi-stacked QDs with a linewidth of 60emV at 1.1μm wavelength.

作者: Zhiqiang Bian Qi Wang Zhigang Jia Zhihong Pan Xiaomin Ren Shiwei Cai Jun Wang Yongqing Huang

作者单位: State Key Laboratory of Information Photonics and Optical Communications(Beijing University of Posts and Telecommunications),Beijing100876,Peoples Republic of China

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference (ACP2013)& International Conferene on Information Photonics and Optical Communications(2013亚洲光纤通信与光电国际会议暨亚太光通信国际会议

会议地点: 北京

会议语种:英文

页码: 1-3

在线出版日期: 2013-11-12（万方平台首次上网日期，不代表论文的发表时间）