Numerical Simulation of the Uni-traveling Carrier Photodiode with GaAsSb/InP Heterojunction

摘要：

　　A kind of GaAsSb/InP uni-traveling carrier photodiode has been simulated by using a 2D drift-diffusion approach.The simulated bandwidth based on the modified structure could reach 106.6GHz at reverse bias of 2V.

作者: Ge Zang Yongqing Huang Xiaomin Ren Xiaofeng Duan Shiwei Cai Xia Zhang Qi Wang Jun Wang

作者单位: State Key Laboratory of Information Photonics and Optical Communications,Beijing University of Posts and Telecommunications,Beijing 100876,China

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference (ACP2013)& International Conferene on Information Photonics and Optical Communications(2013亚洲光纤通信与光电国际会议暨亚太光通信国际会议

会议地点: 北京

会议语种:英文

页码: 1-3

在线出版日期: 2013-11-12（万方平台首次上网日期，不代表论文的发表时间）