1.53μ m EML Fabricated by Ion-Implantation Induced QWI with Etching Implant Buffer Layer

摘要：

　　We present a 1.53μ m electroabsorption modulated distributed feedback laser(EML)fabricated by ion-implantation induced quantum well intermixing(QWI)with etching implant buffer layer.This simple QWI technique can suppress band-edge shift of laser region.The EML exhibits a 18dB@-5 V DC extinction ratio.

作者: Liangshun Han Song Liang Hongliang Zhu Can Zhang Wei Wang

作者单位: Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Science,P. O.Box 912,Beijing 100083,China

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference (ACP2013)& International Conferene on Information Photonics and Optical Communications(2013亚洲光纤通信与光电国际会议暨亚太光通信国际会议

会议地点: 北京

会议语种:英文

页码: 1-3

在线出版日期: 2013-11-12（万方平台首次上网日期，不代表论文的发表时间）