MBE Growth of Bi2Te3 for Thermoelectrics

摘要：

　　Molecular beam epitaxy of Bi2Te3 on various substrates for thermoelectric applications is investigated.Growth conditions were optimized based on Si(111)substrates with two different growth techniques,co-deposition followed by crystallization and direct growth.Growth of Bi2Te3 on GaAs,GaN,et.al.substrates with different crystal directions and offcut angles were investigated.High quality Bi2Te3 thin films were achieved with very low carrier density and record high carrier mobility.

作者: Yuxin Song Sophie Charpentier Attila Fül(o)p Maria Ekstr(o)m Luca Galletti Thilo Bauch Floriana Lombardi Shumin Wang

作者单位: Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg,Sweden;St Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg,Sweden Università degli Studi di Napoli Federico II,Physical Science department,via Cinthia I-80126 Napoli,

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference (ACP2013)& International Conferene on Information Photonics and Optical Communications(2013亚洲光纤通信与光电国际会议暨亚太光通信国际会议

会议地点: 北京

会议语种:英文

页码: 1-3

在线出版日期: 2013-11-12（万方平台首次上网日期，不代表论文的发表时间）