Internal and External Efficiencies in InGaN-Based Light-Emitting Diodes

摘要：

　　The paper will review the physics and key advances in the fields of III-Nitride light-emitting diodes,specifically on approaches to address internal quantum efficiency,extraction efficiency,and efficiency droop in emitters.

作者: Nelson Tansu Chee-Keong Tan Peifen Zhu Guangyu Liu Jing Zhang Hongping Zhao

作者单位: Department of Electrical and Computer Engineering,Center for Photonics and Nanoelectronics,Lehigh University,Bethlehem,PA 18015,USA

会议类型: 国际会议

会议名称: Asia Communications and Photonics Conference (ACP2013)& International Conferene on Information Photonics and Optical Communications(2013亚洲光纤通信与光电国际会议暨亚太光通信国际会议

会议地点: 北京

会议语种:英文

页码: 1-1

在线出版日期: 2013-11-12（万方平台首次上网日期，不代表论文的发表时间）