Design and Characterization of Cryogenic Wideband LNA Using WIN 0.15 μm GaAs pHEMT Process

摘要：

　　This manuscript describes our progress in the development of cryogenic wideband LNA for radio-astronomical applications.With technology maturity and fabrication cost taken into account,the WIN 0.15 μm GaAs pHEMT process is used for the 5-10 GHz and 8-20 GHz LNA design.Room-temperature S-parameters and noise temperature are measured first with gain larger than 20 dB,input and output reflection coefficients below-10 dB within the intended bandwidth.As for the cryogenic noise measurement,the 6 dB cold-attenuator method is used to obtain the corresponding Tn at different ambient temperatures.A noise improvement factor of 3 is observed for cryogenic LNA designed with this 0.15 μm GaAs process.

作者: Ying Chen Bin Li Kun-Long Wu Robert Hu

作者单位: SHAO,Chinese Academy of Sciences,China College of Electrical and Computer Engineering,NCTU,Taiwan

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2013(2013年电磁学研究新进展学术研讨会)

会议地点: 台北

会议语种:英文

页码: 300-302

在线出版日期: 2013-03-01（万方平台首次上网日期，不代表论文的发表时间）