A Low Phase Noise CMOS VCO for the Millimeter Wave Application
In this paper,a low phase noise VCO for millimeter application is presented.The phase noise introduced by the NMOS channel current and the tank loss resistance are modeled to give approximate evaluation of the circuit character,and an optimization of the phase noise has been done according to this model.An inductor is inserted between the drain of one transistor and the gate of the other transistor,and then the transistor gm generation efficiency is improved.To acquire an optimization inductor value,HFSS is used to model the device.The circuit has been simulated in a 90nm CMOS technology.The result indicates that the frequency of the VCO is from 42 to 74GHz,and the phase noise is-100:738 dBc/Hz @ 1MHz in 58 GHz.The VCO core consumes 1.225mA with 0.7V power supply and the FOM is-195.124dBc/Hz in 58GHz.The chip layout occupies 500×800μm2 areas.
Mingzhu Zhou Jincai Wen Jie Wang Zhili Liu
The Institute of Electronic and Information Engineering Hangzhou Dianzi University,China Hangzhou C-Sky Microsystems Co.Ltd.,China
国际会议
Progress in Electromagnetics Research Symposium 2013(2013年电磁学研究新进展学术研讨会)
台北
英文
406-409
2013-03-01（万方平台首次上网日期，不代表论文的发表时间）