Influence of a Strong Electromagnetic Wave(Laser Radiation)on the Hall Coefficient in Doped Semiconductor Superlattices with an In-plane Magnetic Field
The Hall effect is studied theoretically in a doped semiconductor superlattice(DSSL)with a periodical superlattice potential in the z-direction,subjected to a crossed dc electric field(E)1=(0,0,E1)and magnetic field(B)=(0,B,0)((B)is oriented in the plane of free motion of electrons)in the presence of a strong electromagnetic wave(EMW)characterized by electric field(E)=(E0sin(-t),0,0)(where E0 and-are the amplitude and the frequency of EMW,respectively).By using the quantum kinetic equation method for electrons interacting with optical phonons at high temperatures,we obtain analytical expressions for the components σzz and σxz of the Hall conductivity as well as the Hall coefficient with a dependence on B,E1,E0,Ω,temperature T of the system and the characteristic parameters of DSSL.These expressions are fairly different in comparison to those obtained for bulk semiconductors.The influence of the EMW is interpreted by using the dependencies of the Hall conductivity and the Hall coefficient on the amplitude E0 and the frequency-of the EMW.The numerical results for the GaAs:Si/GaAs:Be DSSL show that the Hall coefficient reaches saturation when the magnetic field or the EMW frequency increases.The Hall coefficient varies strongly at small values and reaches saturation at large values of the doped concentration.
N.Q.Bau N.V.Nghia N.V.Hieu B.D.Hoi
Department of Physics,College of Natural Science,Vietnam National University,Hanoi,Vietnam Department of Physics,College of Natural Science,Vietnam National University,Hanoi,Vietnam;Departmen
国际会议
Progress in Electromagnetics Research Symposium 2013(2013年电磁学研究新进展学术研讨会)
台北
英文
416-421
2013-03-01（万方平台首次上网日期，不代表论文的发表时间）