Additional Efficiency Enhanced for DL-ARC Triple-junction GaAs/Ge Solar Cells Based on Indium Nanoparticles Surface
In this paper,we experimentally demonstrated the photovoltaic performance enhancement of a double layer(DL)anti-reflective coating(ARC)triple-junction GaAs/Ge solar cells by using indium nanoparticles surface plasmonics light scattering.The epitaxial structure of triple-junction GaAs/Ge solar cell was grown by metal-organic chemical vapor deposition(MOCVD)and the cell was deposited with TiO2 and Al2O3 anti-reflective layers by e-beam evaporator on the top surface.A 3-nm thick indium film was then deposited on ARC-layer surface by e-beam evaporation system and subsequently annealed by RTA at 200℃ for 20 min in H2 ambient to obtain nano-size indium nanoparticles.The performances of the fabricated DL-ARC triple-junction GaAs/Ge solar cell without indium nanoparticles show that the short circuit current(ISC)of 12.46 mA,open circuit voltage(VOC)of 2.53V,fill factor(FF)of 0.87,and conversion efficiency(η)of 32.59%are obtained under 1 sun AM1.5G solar simulation.As the cell coated with indium nanoparticles,however,ISC increase to 12.59mA and η increase to 33.18%are presented.The increase in ISC andηare attributed to the contribution from the indium nanoparticles surface plasmonics light scattering.Additional efficiency of 1.79%enhanced for a DL-ARC triple-junction GaAs/Ge solar cell was obtained in this study.
Chi-He Lin Wen-Jeng Ho Yi-Yu Lee Jheng-Jie Liu Po-Hung Tsai Yu-Peng Chang
Department of Electro-Optical Engineering National Taipei University of Technology,Taipei 106,Taiwan
国际会议
Progress in Electromagnetics Research Symposium 2013(2013年电磁学研究新进展学术研讨会)
台北
英文
680-683
2013-03-01（万方平台首次上网日期，不代表论文的发表时间）