A Surface-potential Based Compact Model of Gate Capacitance in GaN HEMTs

摘要：

　　A new surface-potential based compact model of the gate capacitance C99 in GaN HEMTs is presented.The 2-D Poisson equation in the GaN layer included the spontaneous and piezoelectric charge terms is solved to obtain an accurate and continuous physics-based analytic explicit calculation of the surface potential.The proposed surface potential provides the accurate descriptions of accumulation and transitional region,develops consistent and higher order differential current and charge equations.The resulted C99 expressions are given explicitly in close form,which will highly improve the simulation continuity and accuracy.

作者: Jie Wang Lingling Sun Jun Liu Mingzhu Zhou

作者单位: Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,China;Dep Key Laboratory of RF Circuits and Systems,Ministry of Education,Hangzhou Dianzi University,China

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2013(2013年电磁学研究新进展学术研讨会)

会议地点: 台北

会议语种:英文

页码: 1195-1198

在线出版日期: 2013-03-01（万方平台首次上网日期，不代表论文的发表时间）