A High-Q CMOS Tunable Notch Filter
A high Q CMOS tunable notch filter incorporating a semi-passive inductor is presented in this paper.The semi-passive inductor uses a tapped-inductor feedback to achieve a negative resistance,and then compensate the resistive losses of the inductor.Compared with conventional transformer feedback architectures,the proposed technique not only compensates resistive losses with low-power consumption but also provides a high-inductance inductor.The simulated peak Q of the semi-passive inductor based on a standard 0.18μm CMOS process is about 150 at 9.7 GHz,and the Q factor at 7 GHz is above 50 which is further applied to a notch filter design.The notch filter can be operated from 6.84 GHz to 7.86 GHz with 1.02 GHz tuning range,and the Q factors of the filter with less than 1.2mW power consumption are above 240 demonstrating a good notching performance.The feasibility of the proposed semi-passive inductor is believed that it is well suited for further practical RF designs such as bandpass filters or VCOs.
Sen Wang Bo-Zong Huang
Department of Electronic Engineering,National Taipei University of Technology,Taipei,Taiwan
国际会议
Progress in Electromagnetics Research Symposium 2011(2011年电磁学研究新进展学术研讨会)
苏州
英文
516-519
2011-09-01（万方平台首次上网日期，不代表论文的发表时间）