A Broadband Low Noise Amplifier for X-band Applications

摘要：

　　A broadband low noise amplifier(LNA)for X-band(8-12 GHz)applications is proposed in this study.The proposed LNA circuit is composed of three-stage NMOS transistors which construct a cascade configuration.The design can achieve wide-band matching and higher gain at the same time.The proposed LNA chip is fabricated by TSMC 0.18μm CMOS process.The chip occupies a die area of 0.45mm2(0.73mm*03.62mm)only.On-wafer measurement was used to measure the characteristics of the LNA.The measured results show that gain(S21)of 15.15~20.05 dB,noise figure(NF)of 2.9~3.1 dB are obtained.The total power consumption is 12.45mW under a power supply voltage of 0.75 V.The good performances of the LNA make it suitable for X-band applications.

作者: Cheng-Chi Yu Jiin-Hwa Yang Hsiao-Hua Yeh Lien-Chi Su

作者单位: Department of Communications Engineering,Feng-Chia University No.100,Wen-Hua Rd.,Seatwen,Taichung 40 Ph.D.Program in Electrical and Communications Engineering,Feng-Chia University No.100,Wen-Hua Rd.,Se

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2011(2011年电磁学研究新进展学术研讨会)

会议地点: 苏州

会议语种:英文

页码: 541-543

在线出版日期: 2011-09-01（万方平台首次上网日期，不代表论文的发表时间）