Design of an LNA with Ultra Low Noise and Model Noise Temperature at 2.45GHz

摘要：

　　This paper presents the design of a low-noise amplifier(LNA)that exhibits ultra low noise figure(NF)and noise temperature.Emphasis was given to achieve the minimum noise figure as offered by the device.The selected device uses E-PHEMT technology and has 0.25 micron gates allowing ultra low noise figure; furthermore requiring minimum feedback for stability.The present design of the LNA features simple structure,minimum NF and excellent overall performance.Furthermore,the present LNA has improved S11 value near-10 dB and output VSWR of 1.073,and obtained an excellent noise figure of 0.202 and model noise temperature of 13.8 K.This design has potential to serve in civil marine radar applications.

作者: S.A.Burney C.Qunsheng

作者单位: College of Electronic Information Engineering Nanjing University of Aeronautics and Astronautics,Nanjing 210016,China

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2011(2011年电磁学研究新进展学术研讨会)

会议地点: 苏州

会议语种:英文

页码: 679-683

在线出版日期: 2011-09-01（万方平台首次上网日期，不代表论文的发表时间）