Extraction of Non-thermal THz Emission from a High Electron Mobility Transistor

摘要：

　　In this paper,we propose and demonstrate a quantitative technique to extract the non-thermal terahertz(THz)emission from a high-electron-mobility transistor(HEMT).The THz emission is extracted from a strong background thermal radiation which lies in the terahertz spectrum too.Based on the technique,we obtained both efficiencies for terahertz emission and thermal emission.We found that the onset voltage of THz emission is below Vds≈1V and the efficiency is maximized at Vds≈2V.Both THz emission and thermal emission saturate above Vds > 9V.

作者: Y.Zhou Y.D.Huang W.Xue X.X.Li S.T.Lou X.Y.Zhang D.M.Wu H.Qin B.S.Zhang

作者单位: Key Laboratory of Nanodevice and Application,Suzhou Institute of Nano-Tech and Nano-Bionics Chinese Academy of Sciences,398 Ruoshui Road,Suzhou Industrial Park,Jiangsu 215123,China

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2011(2011年电磁学研究新进展学术研讨会)

会议地点: 苏州

会议语种:英文

页码: 1223-1226

在线出版日期: 2011-09-01（万方平台首次上网日期，不代表论文的发表时间）