New Method to Calculate the Low Frequency Noise Hooge Parameter:Applications to SiGe HFET

摘要：

　　A new extraction method for the Hooge parameter based on high frequency and low frequency measurements is presented for the first time.We emphasis on the role played by the resistive and electrostatic parasitics on the accuracy of the Hooge parameter.We illustrate this new approach by calculating the Hooge parameter for a Si/Si0.6Ge0.4 n-HFET and we compare these values with those calculated by classical method.

作者: Luis Manuel Rodríguez Mauro A.Enciso-Aguilar Martha C.Galaz Larios

作者单位: Escuela Superior de Ingeniería Mecánica y Eléctrica,Instituto Politécnico Nacional,México D.F.

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2011(2011年电磁学研究新进展学术研讨会)

会议地点: 苏州

会议语种:英文

页码: 1491-1494

在线出版日期: 2011-09-01（万方平台首次上网日期，不代表论文的发表时间）