Research on carrier injection efficiency of SiGe-OI electro-optic modulator

摘要：

　　Based on SiGe-OI(Silicon Germanium on Insulator)material,SiGe-OI electro-optic modulator is established,and PIN electrical modulation structure has been researched.The carrier injection concentration of electro-optical modulator with structure parameters,including the doping concentration of active region,the width of active region,the width between active region and waveguide,Ge content and the other parameters are analyzed,and the device structure parameters are optimized.Compared with SOI(Silicon on Insulator)electro-optic modulator injection concentration,SiGe-OI electro-optic modulator has higher carrier injection efficiency at the same modulation conditions.Accordingly,modulation voltage and modulation power can be effectively reduced.

关键词： Optoelectronic devices electro-optic modulator SiGe-OI PIN structure carrier concentration

作者: Song Feng Ren-ke Jiang Yong Gao

作者单位: School of Science,Xian Polytechnic University,Xian,710048,China;Department of Electronic Engineeri School of Science,Xian Polytechnic University,Xian,710048,China

会议类型: 国际会议

会议名称: The 13th International Conference on Optical Communications and Networks, ICOCN 2014(2014第13届光通信与网络国际会议)

会议地点: 苏州

会议语种:英文

页码: 1-4

在线出版日期: 2014-11-09（万方平台首次上网日期，不代表论文的发表时间）