Formation of Porous Structure of P-type Indium Phosphide by Electrochemical Etching

摘要：

　　The possibility of forming a porous layer on p-type indium phosphide by electrochemical etching is shown.In this case, the right conditions for etching the pores are formed regularly over the entire surface of the plate, pore diameter 30-40 um are given.

关键词： porous indium phosphide photoelectrochemical etching EDAX

作者: Y.A.Suchikova

作者单位: Berdyansk State Pedagogical University,str. Schmidt 4,Berdyansk,71100

会议类型: 国际会议

会议名称: The 12th China-Russia Symposium on Advanced Materials and Technologies(第十二届中俄双边新材料新工艺国际会议)

会议地点: 昆明

会议语种:英文

页码: 139-141

在线出版日期: 2013-11-19（万方平台首次上网日期，不代表论文的发表时间）