Effect of Resistive Switching in Graphene Oxide Nanostructures

摘要：

　　Resistive switching in graphene oxide (GO) has been investigated.The planar structures were fabricated on a Si/Si02 substrate by spin-coating graphene oxide suspensions and patterning Ti electrodes by photolithography.Sustainable resistive switching with the currents ratio of 2 orders of magnitude was ob served in planar graphene oxide structures at low bias voltage (< 1V).It was shown the switching depends on the degree of GO reduction.The obtained results indi cate that the GO structures are promising for low-pow er resistive switching applications.

作者: O.O.Kapitanova G.N.Panin A.N.Baranov T.W.Kang

作者单位: Department of Material Sciences,Moscow State University,Moscow,Russia Physics Department,QSRC,Dongguk University,Seoul,Korea ;Institute for Microelectronics Technology,14 Department of Chemistry,Moscow State University,Moscow,Russia Physics Department,QSRC,Dongguk University,Seoul,Korea

会议类型: 国际会议

会议名称: The 12th China-Russia Symposium on Advanced Materials and Technologies(第十二届中俄双边新材料新工艺国际会议)

会议地点: 昆明

会议语种:英文

页码: 152-154

在线出版日期: 2013-11-19（万方平台首次上网日期，不代表论文的发表时间）