Giant Magnetoresistance in the Fe/SiO2/p-Si Hybrid Structure under Non-equilibrium Conditions

摘要：

　　We report on the giant magnetore sistive effect in a simple Fe/SiO2/p-Si-hybrid structure-based device from two back-to-back Schottky diodes.The effect is revealed only under the non-equilibrium conditions caused by optical radiation.It is demonstrated that the magnetoresist ance ratio attains 104% and more.Important is that the magnetoresistive effect is implemented exdnsive ly in the subsystem of minority charge carriers transferred to the non-equilibrium states.The de velopment of magneto-sensitive devices of this type can give grounds for a novel direction of semicon ductor spintronics.

作者: N.V.Volkov A.S.Tarasov A.O.Gustajcev O.N.Volkova S.N.Varnakov S.G.Ovchinnikov

作者单位: Kirensky Institute of Physics,Russian Academy of Sciences,Siberian Branch,Krasnoyarsk,660036 Russia Kirensky Institute of Physics,Russian Academy of Sciences,Siberian Branch,Krasnoyarsk,660036 Russia Siberian Federal University,Krasnoyarsk,Institute of Engineering Physics and Radio Electronics,Krasn

会议类型: 国际会议

会议名称: The 12th China-Russia Symposium on Advanced Materials and Technologies(第十二届中俄双边新材料新工艺国际会议)

会议地点: 昆明

会议语种:英文

页码: 216-219

在线出版日期: 2013-11-19（万方平台首次上网日期，不代表论文的发表时间）