A Study on Structrual and Optical Properties of Al0.6 Ga0.4 N Films Grown on AlN/sapphire Templates

摘要：

　　Alx Ga1-xN can be widely used in ul traviolet optoelectronic devices as well as high-pow er high-temperature high-frequency dectronic de vices.In this work, Al0.6 Ga0.4 N films grown on AIN/sapphire templates by metalorganic chemical vapor deposition system were characterized by high resolution X-ray diffraction (HRXRD) and low temperature cathodoluminescence (CL) methods.Its found that there was phase separation phenome non occurring in the films by XRD measurements.The optical properties obtained from CL spectra fur.ther confirmed this phenomenon.The mechanism of phase separation is also discussed.

关键词： phase separation AlN/sapphire templates cathodoluminescence strain relaxation

作者: J.J.Wang N.Y.Liu K.Zhang Z.Q.Zhang W.Zhao G.H.Fan N.Zhang Z.T.Chen

作者单位: Guangzhou Research Institute of Non-ferrous Metals,China

会议类型: 国际会议

会议名称: The 12th China-Russia Symposium on Advanced Materials and Technologies(第十二届中俄双边新材料新工艺国际会议)

会议地点: 昆明

会议语种:英文

页码: 224-226

在线出版日期: 2013-11-19（万方平台首次上网日期，不代表论文的发表时间）