Anti-electrostatic damage characteristic of micro-semiconductor bridge

摘要：

　　Aimed at the problems that the micro-semiconductor bridge damage in strong electrostatic voltage leads to early explosion、 mistaken explosion and reduced reliability of semiconductor bridge EED, the paper study bridge damage and resistance change in different strength of the electrostatic voltage, analyse the relationship between electrostatic voltage strength and damage area of bridge as well as changes in electrical resistance, and apply antistatic capacitance to do antistatic reinforcement and performance experiments for the miniature semiconductor bridge.The experimental results show that, after shunted a capacitance, the semiconductor bridge makes antistatic ability enhance greatly, the bridge and explosive have no damage, but fire voltage increases and fire time slows down while capacitance increases.

关键词： Semiconductor Bridge Eiectrostatic discharge Initiator

作者: LI Liming YIN Guofu REN Wei LI Fang

作者单位: National Key Laboratory of Applied Physics and Chemistry,Shanxi Applied and Chemistry Research Institute,Xi an,710061

会议类型: 国际会议

会议名称: 2013 International Autumn Seminar on Propellants, Explosives and Pyrotechnics(2013国际推进剂、炸药、烟火技术秋季研讨会)

会议地点: 成都

会议语种:英文

页码: 564-568

在线出版日期: 2013-09-24（万方平台首次上网日期，不代表论文的发表时间）