Influence of Sputtering Power on Molybdenum-doped Zinc Oxide Films Grown by RF Magnetron Sputtering
Molybdenum-doped zinc oxide (MZO) films have been prepared by RF magnetron sputtering on glass substrates at room temperature.The structural, electrical and optical properties of the films vary with sputtering power from 15 W to 70 W are investigated.X-ray diffraction (XRD) analysis reveals that all the films are polycrystalline with the hexagonal structure and have a preferred orientation along the c axis perpendicular to the substrate.The resistivity increases with the increase of the RF power.The lowest resistivity achieved is 5.4× 10-3 Ω cm at a RF power of 15 W with a Hall mobility of 11 cm2 V-1 s-1 and a carrier concentration of 1.1 × 1019 cm-3.The average transmittance drops from 85% to 81% in the visible range and the optical band gap decreases from 3.26 eV to 3.19 eV with the increase of the RF power.
transparent conducting oxides molybdenum oxide zinc oxide magnetron sputtering
Xian-Wu Xiu Li XU Cheng-Qiang Zhang
College of Physics and Electronics, Shandong Normal University, Jinan 250014, China Shandong College of Electronic Technology, Jinan 250200, China Jinan Preschool Education College, Jinan 250307, China
国际会议
The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)
哈尔滨
英文
426-430
2013-08-23（万方平台首次上网日期，不代表论文的发表时间）