Effects of Si Spacer-layer on the Structure of Ge/Si Quantum Dots Bilayers Grown by Ion Beam Sputtering

摘要：

　　A series of double-layer Ge/Si quantum dots are prepared by ion beam sputtering deposition (IBSD) on Si (100) substrates.The influences of deposition temperature and thickness of Si spacer-layer on the microstructure of double-layer Ge/Si quantum dots were characterized by using Atomic force microscopy (AFM) and Raman spectra technique.The results indicate that the density of the second layer islands firstly increases and then decreases with increasing the growth temperature of Si spacer-layers.In addition, increasing the thickness of Si spacer-layer, the islands merger phenomenon disappears.When the deposition thickness is larger than 40 nm, the islands on the upper-layer show the same features with the buried islands.The mechanism of three-factor -interactions ofnano-islands is proposed to explain these phenomena, and our results can be used as a guidance to obtain optimum IBSD growth process for Ge/Si quantum-dot superlattices.

关键词： Si spacer-layer Ge/Si quantum dots Ion beam sputtering

作者: Xi Zhou Chong Wang Jie Yang Ying-xia Jin Yu Yang

作者单位: Institute of Optoelectronic Information Material, Yunnan University, Kunming 650091, China

会议类型: 国际会议

会议名称: The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)

会议地点: 哈尔滨

会议语种:英文

页码: 479-485

在线出版日期: 2013-08-23（万方平台首次上网日期，不代表论文的发表时间）