An Ultraviolent-Enhanced Response Solar Cell and Tunneling Effect

摘要：

　　A sort of ITO/SiO2/n+p configuration of solar grade silicon-based SINP device has been successfully fabricated by coupling high quality of indium tin oxide (ITO) thin film and ultra-thin silicon dioxide buffer layer on the p-n junction, which showed a potential to improve the short-circuit current density (Jsc) as well as the conversion efficiency.The progress to avoid the use of last two processes with PECVD and high temperature firing in the normal production for the crystal silicon solar cell may be a way toward the low cost and the high efficiency.In addition, the tunneling hypostasis of carriers is present in the device.

关键词： Novel configuration of c-Si solar cell Low cost processing High current density

作者: Bo He Hui-wei Du Lei Zhao Fei Xu Zhong-quan Ma

作者单位: SHU-Solar E Laboratory, Department of Physics, Shanghai University, Shanghai 200444, P.R.China

会议类型: 国际会议

会议名称: The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)

会议地点: 哈尔滨

会议语种:英文

页码: 528-533

在线出版日期: 2013-08-23（万方平台首次上网日期，不代表论文的发表时间）