Growth and Characterization of 420 kg Bulk Multicrystalline Silicon (mc-Si) Ingot Grown by Directional Solidification Process for Photovoltaic Application
Cast mc-Si ingots are widely used in photovoltaic manufacturing.The utilization rate of industrial polycrystalline silicon ingot only about 70%, most of them are less than 70%, the main influence factors are casting process, raw and auxiliary materials as well as the crucible material.The growth process and the overall characteristics of 420 kg polycrystalline silicon ingot are analyzed and researched in detail.This paper focuses on the distribution characteristics and causes of the casting defect which are analyzed in detail and discussed, at the same time suggestions are given to improve the utilization rate of the ingot.
multicrystalline silicon Directional solidification photovoltaic Solar cells
Da-wei Luo
College of Materials and Chemistry & Chemical Engineering, Chengdu University of Technology, Chengdu, 610059, China
国际会议
The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)
哈尔滨
英文
592-597
2013-08-23（万方平台首次上网日期，不代表论文的发表时间）