The Development and Application of Si-based Quantum Dot Resonant Tunneling Diodes

摘要：

　　The development history of resonant tunneling diodes(RTD), the principle of quantum dot resonant tunneling diodes (QDRTD), and their characteristics of exceptional negative differential resistance (NDR) of QDRTD, are briefly introduced in this paper.The typical type and the design processes of QDRTD, and recent research progress are summarized in detail.Finally, the facing problems and the future necessary development directions of QDRTD are discussed.

关键词： Self-assembled quantum dots Resonant tunneling diodes Silicon based Carrier transport

作者: Jintao Yao Chong Wang Jie Yang Yu Yang

作者单位: Institute of Optoelectronic Information Materials, Yunnan University, Kunming, China

会议类型: 国际会议

会议名称: The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)

会议地点: 哈尔滨

会议语种:英文

页码: 737-743

在线出版日期: 2013-08-23（万方平台首次上网日期，不代表论文的发表时间）