Transport Properties of Two-dimensional Electron Gas in Cubic AlGaN/GaN Heterostructures
We presented a theoretical study of the dependence of 2DEG mobility on temperature, barrier thickness, A1 content, donor concentration to reveal the internal physics of 2DEG mobility in cubic AlGaN/GaNheterostructures.The 2DEG mobility is modeled as a combined effect of the scattering mechanisms including acoustic phonons, ionized impurity, dislocation, alloy disorder and interface roughness scattering.The variation of mobility results mainly from the change of 2DEG density and temperature.It reveals the dominant scattering mechanismsare dislocation and alloy disorder scattering atlow temperature.Acoustic phonons scattering becomes the major limit at 300k.Impurity scattering plays the key role when donor density rises.We find a maximum mobility with a structure of 25% Al content and 4-5nm barrier thickness.
Cubic AlGaN/GaN 2DEG Mobility Scattering Mechanisms
Qian Feng Peng Shi Jie Zhao Kai DU Yu-kun Li Qing Feng Yue Hao
School of Microelectronics, Xidian University, Xran 710071 , China ; Key Laboratory of Wide Band-Gap School of computer science and techneology, Xidian University, Xian 710071 , China
国际会议
The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)
哈尔滨
英文
777-782
2013-08-23（万方平台首次上网日期，不代表论文的发表时间）