Photoelectric Properties of the Doped Silicon with Carbon Family Elements

摘要：

　　Today, silicon material plays an irreplaceable role in microelectronic of the information industry, however it dont have a good emission characteristics.In order to explore the emission character, we calculated the electrons structure, absorbance of silicon doped with C, Si, Ge, Sn and Pb by the first-principles methods.

关键词： Doping silicon Electro-optical properties Calculation

作者: Peng-fei Jia Chong Wang Jie Yang Zhang-sheng Shi Yu Yang

作者单位: Institute of Optoelectronic Information Materials, Yunnan University, Kunming, China

会议类型: 国际会议

会议名称: The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)

会议地点: 哈尔滨

会议语种:英文

页码: 793-798

在线出版日期: 2013-08-23（万方平台首次上网日期，不代表论文的发表时间）