Investigation of time instability factors in Ti-SbxTe based phase change memory

摘要：

　　In this paper, the two time instability factors in phase change memory, amorphous resistance drift and spontaneous crystallization process, are studied based on Ti2.75(SbxTe)97.25 and Ti6.85(SbxTe)93.15.The drift coefficients of both components are calculated and compared under room temperature.The reason why the drift coefficient decreases with the Ti concentration increases is discussed based on the band structure model of amorphous phase change materials.And the data retention change trend is also presented.The experiment results and the physical explaination can also be extended to other metallic element doped SbxTe alloy phase change materials.

关键词： phase change material time instability amorphous resistance drift data retention

作者: Xinglong Ji Liangcai Wu Feng Rao Zhitang Song Min Zhu Songlin Feng

作者单位: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-system and

会议类型: 国际会议

会议名称: The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)

会议地点: 哈尔滨

会议语种:英文

页码: 825-830

在线出版日期: 2013-08-23（万方平台首次上网日期，不代表论文的发表时间）