The Ferroelectric Field Effect Transistor Simulation and Analysis

摘要：

　　A ferroelectric field effect transistor (FFET) with the metal/ferroelectric/semiconductor (MFS) structure is designed and simulated.The simulation results show that the drain current at Vg=0 after polarized is decided by Pr and Pr/Ps.When increasing Pr, Id enhanced.When Pr/Ps decreases, Id increases if the FFET is saturated.When a voltage (Vp=l.5v) is applied on the FFET, Id may be stable and not sensitive to the variation of Pr/Ps.This FFET stable output voltage is decided by Ec.

关键词： Simulation FFET Polarization Voltage Coercive Voltage Drain Current

作者: Qiang Wang Sun-haochen Zhang Zhengdong Yu Guoran Hua

作者单位: School of Electronic and Information, Nantong University, Nantong 226019, China School of Computer Science, Nantong University, Nantong 226019, China School of Mechanical Engineering, Nantong University, Nantong 226019.China

会议类型: 国际会议

会议名称: The Eighth China National Conference on Functional Materials and Applications(第八届中国功能材料及其应用学术会议)

会议地点: 哈尔滨

会议语种:英文

页码: 850-854

在线出版日期: 2013-08-23（万方平台首次上网日期，不代表论文的发表时间）