Reactive Ion Etching Optimization Method Based on Orthogonal Experiment

摘要：

　　The orthogonal experiment is used for selecting parameters of the etching SIO2 equipment.The process applies etching uniformity and etching rate as evaluation indexes.The main factors influencing etching process are found out.Through further optimization, the advanced SIO2 etching is made to realize etching uniformity less than 5% and etching rate higher than 300nm/min.

关键词： etching rate uniformity the orthogonal experiment

作者: Wang Xiaoguang Qi Hong Zhang Yan

作者单位: Engineering Center of Chip and Microsystem,The 49th Research Institute of CETC Harbin,China

会议类型: 国际会议

会议名称: 2013 IEEE 11th International Conference on Electronic Measurement & Instruments(第十一届IEEE国际电子测量与仪器学术会议)

会议地点: 哈尔滨

会议语种:英文

页码: 718-721

在线出版日期: 2013-08-16（万方平台首次上网日期，不代表论文的发表时间）