Optimization of Inlets and Outlets of an ALD Chamber with Radiant Heating
A chemical reaction chamber was designed and manufactured to grow high quality,ultra-thin films using the atomic layer deposition (ALD) technology.As the distribution of temperature and gas pressure has large influences on the thickness of sub-nanometer films,it is crucial to achieve uniformity in terms of temperature and gas flow on the substrate.We report here the design and optimization of a cross-flow structured and radiation heated chamber,with special focus on the multi-inlet and multi-outlet structures to deliver the precursors and to get better distribution uniformity.Simulations based on finite element method (FEM) are employed to optimize the structure and corresponding experiments are made to validate with the simulation results.We find that by adjusting the inlet and outlet parameters,such as the inlet numbers and diameter,it is possible to achieve better uniformity of pressure on the substrate and a narrower film thickness distribution within the chamber.Factors influencing the gas flow over the wafer surface are reported and discussed.
atomic layer deposition (ALD) chamber simulation finite element method(FEM)
Jiang Huawei Zhou Tao Liu Xiao Bin Shan Rong Chen
State Key Laboratory of Material Processing and Die and Mould Technology and School of Materials Sci State Key Laboratory of Digital Manufacturing Equipment and Technology and School of Mechanical Scie
国际会议
2013 International Symposium on Assembly and Manufacturing(2013装配与制造国际专题会议)
西安
英文
12-15
2013-07-01（万方平台首次上网日期，不代表论文的发表时间）