Effects of H2 Flow Rate and H2 Plasma Treatment on the Properties of AZO Films
In this study, a 1350℃-sintered 98 mol% ZnO-1 mol% Al2O3 (AZO, Zn:Al=98:2) ceramic was used as a target and deposited on glass using a r.f.magnetron sputtering system at a deposition temperature of 200℃.The effects of different H2 flow rates (H2/(H2+Ar)=0% ~ 9.09%, abbreviated as H2-deposited AZO films) added during the deposition process on the crystallization, resistivity, and optical transmission spectrum of AZO films were investigated.The Burstein-Moss shift effects were measured and used to prove that the defects of AZO films decreased with increasing H2 flow rate.For comparison, the 2% H2-deposited AZO films were also treated by the H2 plasma at room temperature for 60 min (plasma-treated AZO films).The effects of H2 plasma on the properties of the H2-deposited AZO films were also studied.The value variations in the optical band gap (Eg) of the H2-deposited and plasma-treated AZO films were evaluated from the plots of (αhv)2 =c(hv-Eg).
AZO hydrogen flow rate H2 plasma optical band gap
C.G.Kuo C.L.Li C.C.Huang F.H.Wang C.F.Yang I.C.Chen
Department of Industrial Education,National Taiwan Normal University.Taipei,Taiwan Department of Chemical and Materials Engineering,National University of Kaohsiung, Department of Electrical Engineering,National Chung Hsing University,Taiwan
国际会议
香港
英文
447-451
2013-06-25（万方平台首次上网日期，不代表论文的发表时间）