Red Light Emission from Silicon Created by Self-ion Implantation and Thermal Annealing

摘要：

　　Silicon substrates were implanted with Si ions at an energy of 60 keV to a dose of 5 × 1015 cm-2 followed by a thermal annealing at various temperatures up to 950 ℃.Photoluminescence (PL) and infrared absorption (IRA) techniques have been used to characterize these samples.The PL peak positions at 2.07 eV and 1.93 eV undergo redshifts with the increasing annealing temperature.The two IRA peaks at 1080 cm-1 and 800 cm-1 are ascribed to the Si-O-Si asymmetric stretching and the Si-O bending vibration, respectively.The experimental results indicate that Si nanocrystals embedded in silicon oxide layer can be formed at the annealing temperature 800 ℃ or higher.

关键词： Photoluminescence Si nanocrystals Ion implantation Annealing

作者: Sai Lu Chong Wang Wen-jie Wang Jie Yu Jie Yang Yu Yang

作者单位: Institute of Optoelectronic Information Materials,Yunnan University,Kunming,China,650091

会议类型: 国际会议

会议名称: 2012 China Functional Materials Technology and Industry Forum(2012中国功能材料科技与产业高层论坛)(CFMTIF2012)

会议地点: 昆明

会议语种:英文

页码: 109-113

在线出版日期: 2012-11-09（万方平台首次上网日期，不代表论文的发表时间）