Characterization of Nd:Y3Al5O12 thin films prepared by electron beam evaporation deposition

摘要：

　　Nd:YAG thin films have been prepared on Si(100) substrates by electron beam evaporation deposition.The surface morphologies, crystalline phases and optical properties of the Nd:YAG thin films were characterized by x-ray diffraction, scanning electron microscopy, photoluminescence spectroscopy, and spectrophotometer.The crystallization of Nd:YAG thin films was improved after annealing at 1100 ℃ for 1 hour in vacuum.Excited by a Ti:sapphire laser at 808 nm, photoluminescence spectra of Nd:YAG thin films were measured at room temperature, and the transition of 4F3/2--→4I11/2 of Nd3+ in YAG in the region of 1064 nm were detected by a liquid nitrogen cooled InGaAs detector array.

关键词： Nd:YAG thin film Electron beam evaporation Photoluminescence

作者: Hao Ren Qun Zeng Xihui Liang

作者单位: School of Information and Optoelectronic Science and Engineering,South China Normal University,Guang School of Information and Optoelectronic Science and Engineering,South China Normal University,Guang Guangzhou Research Institute of Optics-Mechanics-Electricity Technology,Guangdong Guangzhou 510663

会议类型: 国际会议

会议名称: 2012 China Functional Materials Technology and Industry Forum(2012中国功能材料科技与产业高层论坛)(CFMTIF2012)

会议地点: 昆明

会议语种:英文

页码: 150-154

在线出版日期: 2012-11-09（万方平台首次上网日期，不代表论文的发表时间）