Advance in the Growth of Ordered Ge/Si Quantum Dots

摘要：

　　Recent progress in the growth of ordered Ge/Si quantum dots (QDs) is reviewed.We focus on the detailed progresses of the Ge/Si multiple layers QDs and the preparation of Ge/Si QDs by ion beam irradiation.In addition, the growth of Ge/Si QDs on patterned substrate by using different preparation methods are also well discussed, such as nanosphere lithography technology, extreme ultra-violet interference lithography technology, nanoimprint lithography technology, etc.

关键词： Ordering Ge/Si quantum dots Multiple layers Ion beam irradiation Patterned substrate

作者: Hai-peng Wang Chong Wang Jie Yu Jie Yang YU Yang

作者单位: Institute of Optoelectronic Information Materials,Yunnan University,Kunming,China

会议类型: 国际会议

会议名称: 2012 China Functional Materials Technology and Industry Forum(2012中国功能材料科技与产业高层论坛)(CFMTIF2012)

会议地点: 昆明

会议语种:英文

页码: 168-175

在线出版日期: 2012-11-09（万方平台首次上网日期，不代表论文的发表时间）