Coulomb effects in the Ge/Si Single Quantum Dot

摘要：

　　Using scanning probe microscopy (SPM) technique, the electronic properties of Ge/Si quantum dots (QDs) have been characterized.Our results demonstrate that a layer of a disordered structure is formed between the Ge/Si QDs and the surface of Si substrate due to the defects in QDs during the bias voltage applied.That is, a double tunneling system in which the Coulomb blocking effect can be observed is constructed during the electronic measurement for the single quantum dot (SQD).

关键词： Ge/Si single QD I-V curve Coulomb characteristics

作者: Lihong Zhang Chong Wang Jie Yang Jintao Yao Yu Yang

作者单位: Institute of Optoelectronic Information Materials,Yunnan University,Kunming,China

会议类型: 国际会议

会议名称: 2012 China Functional Materials Technology and Industry Forum(2012中国功能材料科技与产业高层论坛)(CFMTIF2012)

会议地点: 昆明

会议语种:英文

页码: 176-180

在线出版日期: 2012-11-09（万方平台首次上网日期，不代表论文的发表时间）