Effect of annealing temperature on oxygen precipitation in fast neutron irradiated CZ-Si

摘要：

　　The effect of annealing temperature on oxygen precipitation was investigated in various dose fast neutron irradiated Czochralski silicon (CZ-Si).Fourier Transform Infrared Absorption Spectrometer (FTIR) was used to measure the concentration of interstitial oxygen (Oi).Bulk microdefects (BMDs) were observed by optical microscope.The behavior of oxygen precipitation depends on the annealing temperature and the concentration of irradiation-induced defects.The mount of oxygen precipitates of irradiated samples is more than that in non-irradiation samples and increases with increasing the irradiation dose.Because of the effect of temperature on critical radius rc and the oxygen diffusivity, oxygen precipitation increase with the increase of temperature at the studied lower temperature range, while decrease with the increase of temperature at the studied higher temperature range.High density dislocation and stacking faults generate in irradiated sample.

关键词： Irradiation CZ-Si Oxygen precipitation Oi

作者: Qiao-yun Ma Zhan-kai Li

作者单位: School of Science,Tianjin University of Commerce,Tianjin 300134,China;Key Lab for New Type of Functi Province-Ministry joint Key Laboratory of Electromagnetic Field and Electrical Apparatus Reliability

会议类型: 国际会议

会议名称: 2012 China Functional Materials Technology and Industry Forum(2012中国功能材料科技与产业高层论坛)(CFMTIF2012)

会议地点: 昆明

会议语种:英文

页码: 403-406

在线出版日期: 2012-11-09（万方平台首次上网日期，不代表论文的发表时间）