Progress on the Numerical Calculation of Electrical Characteristics of Strained SiGe Channel p-MOSFET

摘要：

　　Recent progress in the computer simulation of strained SiGe channel p-MOSFET performance is reviewed.The electrical characteristics of strained SiGe channel p-MOSFET, such as threshold voltage, subthreshold characteristics, output characteristics, transconductance, quasistatic C-V characteristics and transfer characteristics, and the effects of Ge mole fraction on electrical characteristics, are well discussed.Finally, the development of strained SiGe channel p-MOSFET is prospected.

关键词： Strained SiGe channel p-MOSFET Threshold voltage Subthreshold characteristics Output characteristics Ge mole fraction

作者: Jie Yu Chong Wang Yu Yang

作者单位: Institute of Optoelectronic Information Materials,Yunnan University,Kunming,China

会议类型: 国际会议

会议名称: 2012 China Functional Materials Technology and Industry Forum(2012中国功能材料科技与产业高层论坛)(CFMTIF2012)

会议地点: 昆明

会议语种:英文

页码: 465-472

在线出版日期: 2012-11-09（万方平台首次上网日期，不代表论文的发表时间）