The Carrier Mobility Obtained by Admittance Spectroscopy Using An Equivalent Circuit

摘要：

　　A single-carrier hole-only device of ITO/MoO3/NPB/A1 was used to measure the hole mobility of NPB layer, where NPB is a hole transport material.The hole mobility of NPB at different electric fields was obtained from the hole transit time (ιdc) which was extracted from the negative differential susceptance (ΔB) as a function of frequency.To eliminate the impact of the contact resistance on the mobility measurement, an equivalent circuit model has been introduced to calculate the capacitance and the conductance of the NPB layer.By fitting the Nyquist plot of the impedance spectroscopy using the equivalent circuit, the contact resistance can be extracted from the impedance measurements.It is found that the mobility at low electric field is lower than what was reported in literature after the consideration of the contact resistance.It is also found that the calculated hole mobility of the NPB layer follows the Poole-Frenkels rule.

关键词： Admittance spectroscopy Hole mobility Single carrier device NPB Nyquist plot

作者: Lei-Ming Yu De-Ying Luo Jun-Jie Li Jia-Xiu Man Zheng-Hong Lu Zhu Liu

作者单位: School of physics science and technology of Yunnan University,Kunming City,Yunnan Province,China 650 School of physics science and technology of Yunnan University,Kunming City,Yunnan Province,China 650

会议类型: 国际会议

会议名称: 2012 China Functional Materials Technology and Industry Forum(2012中国功能材料科技与产业高层论坛)(CFMTIF2012)

会议地点: 昆明

会议语种:英文

页码: 707-712

在线出版日期: 2012-11-09（万方平台首次上网日期，不代表论文的发表时间）