Study of Mesa Etching for Infrared Detector based on InAslGaSb Superlattice

摘要：

　　InAs/GaSb superlattice in infrared detector was grown on GaSb substrates by molecular beam epitaxy technique.Using inductively coupled plasma (ICP) etching technique and Cl2/Ar etching gas,the smooth mesa of the device was formed.The influence of etching time,Cl2 percent and RF power on the etching rate and the surface morphology of lnAs bulk,GaSb bulk materials and superlattice were studied.It showed that the etching rate of lnAs was lower than that of GaSb and the etching surface was smooth at CI2 in the range of 20%~40%.The results will benefit to forming ohm contact and decrease surface leakage current in the photovoltaic detector.

关键词： InAs/GaSb superlattice infrared detector ICP etching

作者: Jie Guoa Ruiting Hao Qianrun Zhao Shiqing Man

作者单位: School of Physics and Electronic Information,Yunnan Normal University,Kunming China

会议类型: 国际会议

会议名称: 2013 2nd international Conference on Opto-Electronics Engineering and Materials Eesearch(2013第二届光电工程与材料研究国际会议)(OEMR2013)

会议地点: 郑州

会议语种:英文

页码: 497-500

在线出版日期: 2013-10-19（万方平台首次上网日期，不代表论文的发表时间）