10Gbps VCSEL Driver in 0.18pm CMOS Technology

摘要：

　　A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology.High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure.Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps,and delivers 9.7mA modulation current.With single 1.8V power supply,the core power consumption is 22.5mW and the die size is 800μm×500μm.

关键词： VCSEL shunt peaking cascade 10Gbps optical communications

作者: Yu Bingliang Chen Ji Li Wenyuan

作者单位: Shandong Provincial Key Laboratory of Ocean Environment Monitoring Technology,Qingdao 266001,China;S Institute of RF & OE-ICs.Southeast University,Nanjing 210096,China

会议类型: 国际会议

会议名称: 2013 2nd international Conference on Opto-Electronics Engineering and Materials Eesearch(2013第二届光电工程与材料研究国际会议)(OEMR2013)

会议地点: 郑州

会议语种:英文

页码: 511-515

在线出版日期: 2013-10-19（万方平台首次上网日期，不代表论文的发表时间）