Investigation on the Solution-based Metal-Oxide Semiconductor Film and Its Properties
In this paper,the ZrlnZnO thin film has been prepared by solution method.The influence of heat treatment conditions on film properties has been analyzed.With the treatment temperature and time increase,the Hall mobility and square resistance of the film were increased and reduced respectively.In addition,we analyzed the role of heavy metal Zr on oxygen vacancies in the semiconductor oxide combined with heat treatment results and the chemical reaction process.It has been found that heavy metal Zr has binding effect on oxygen,it effectively inhibits the generation of oxygen vacancies,thereby reducing the number of oxygen vacancies,but at the same time causing certain binding effect to carriers.
Amorphous Metal-OxideSemiconductor Solution Heat Treatment Binding Effect Oxygen Vacancy
Juan Li Ming Yang Shaozhen Xiong
Institute of Photo-Electronics,Nankai University,the Tianjin Key Laboratory for Photo-Electronic Thin Film Devices and Technology,Tianjin 300071,China
国际会议
郑州
英文
1974-1978
2013-10-19（万方平台首次上网日期，不代表论文的发表时间）