Surface layer damage of silicon wafers sliced by wire saw process
Wire saw process is widely used in the machining of hard and brittle materials with low surface damage and high efficiency.Cutting of silicon wafers in integrated circuit (IC),semiconductor and photovoltaic solar industries is also generally using wire saw process.However,the surface layer damage induced by wire saw process will seriously decrease the wafer quality and increase the process time and production costs of the post grinding and polishing.The surface layer qualities of the silicon wafers sawed by the different wire saw processes was investigated in this paper.The characteristics of surface roughness,surface topography and subsurface damage of silicon wafers sliced by the fixed abrasive and the loose abrasive wire sawing respectively were compared and the corresponding reasons were analyzed.
Loose abrasive wire sawing Fixed abrasive wire sawing Silicon wafer Subsurface damage
Renke Kang Yanfen Zeng Shang Gao Zhigang Dong Dongming Guo
Key Laboratory for Precision and Non-traditional Machining Technology of Ministry of Education,Dalian University of Technology,Dalian 116024,P.R.China
国际会议
杭州
英文
685-690
2013-09-23（万方平台首次上网日期，不代表论文的发表时间）