The origin of crack surface instabilities in silicon crystal

摘要：

　　Previous investigations showed micron scale height corrugations instabilities on the fracture surface of (111) low energy cleavage plane of silicon, when the crack was propagated in the direction at speed below 1100 m·s-1. These corrugations were evident in three point bending and tensile experiments, and resemble fluctuations on the (111) and (110) low energy cleavage planes, propagating along the intersection line of both planes.

关键词： brittle fracture defects surface instabilities silicon

作者: Liron Ben Bashat Dov Sherman

作者单位: Department of Materials Science and Engineering,Technion Israel Institute of Technology,Haifa 32000,Israel

会议类型: 国际会议

会议名称: 第13届国际断裂大会(ICF2013)

会议地点: 北京

会议语种:英文

页码: 1-1

在线出版日期: 2013-06-16（万方平台首次上网日期，不代表论文的发表时间）