Study on Radiation induced Mechanical Degradation of Amorphous Silicon Carbide Films
In this paper, the radiation effects of 1MeV protons on hydrogenated amorphous SiC films are studied by simulation and experiments. The molecular dynamics simulation by SRIM-2012 software package indicates that compared to crystalline SiC, hydrogenated amorphous SiC may suffer less radiation damage. SiC films with a thickness of 500nm are deposited on silicon substrates by PECVD, and then annealed at about 450℃. The prepared hydrogenated amorphous SiC films are irradiated by 1MeV protons in an electrostatic tandem accelerator at a flux of about 1.4×1012 cm-2·s-1 for 2 hours. The mechanical changes in irradiated silicon carbide films are investigated by nano-indentation and nano-scratch method. The irradiated film suffers a decrease in hardness and Young Modulus, but keeps nearly the same friction coefficient and surface topography as the contrast films.
Silicon Carbide Mechanical degradation Radiation damage
Bo Meng Wei Tang Xuhua Peng Haixia Zhang
Institute of Microelectronics,Peking University,100871,CHINA
国际会议
北京
英文
1-6
2013-06-16（万方平台首次上网日期，不代表论文的发表时间）